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(Click for frequent words.) 69 ownership CoO 68 #.# micron node 67 oxide thickness 67 parasitic capacitance 67 thinner wafers 66 copper interconnects 66 defect densities 65 smaller geometries 65 dual damascene 65 SOI CMOS 65 geometries shrink 65 dielectric etch 64 3Xnm 64 parasitic inductance 64 nanometer node 64 conductivities 64 threshold voltages 64 MOS transistors 64 epitaxial layer 64 Si substrate 64 CMOS transistors 64 silicon photovoltaics 64 parasitic capacitances 64 pMOS 63 SiON 63 leakage currents 63 #μm thick [002] 63 etch selectivity 63 planarization 63 elastic modulus 63 #mm ² [001] 63 1μm 63 chipscale 63 insulator SOI technology 63 Elpida #nm 63 dielectric constants 63 pore sizes 63 GaN wafers 63 PolyMax 63 nm wavelengths 62 nm nodes 62 wafer uniformity 62 #nm MirrorBit 62 thermal conduction 62 #.#nm [002] 62 nMOS 62 RFMD GaN 62 GaAs substrate 62 crystalline Si 62 transistor leakage 62 low k dielectrics 62 SOI wafer 62 ceramic capacitor 62 Powerful debug 62 BGA packaging 62 CMOS scaling 62 LSA#A 62 MAX# integrates 62 Vdd 62 FinFET 62 silicon substrates 62 QFN packaging 62 6T SRAM 62 selective emitter 62 #nm silicon 62 crystallinity 62 silicide 61 K dielectrics 61 SOI wafers 61 wirebond 61 Young modulus 61 multicrystalline silicon 61 CAPEX OPEX 61 #nm lithography [002] 61 #μm [002] 61 fab utilization 61 reagent consumption 61 nanometer CMOS 61 5V CMOS 61 #nm 8GB 61 CMOS fabrication 61 linewidths 61 impedance measurements 61 transistor arrays 61 dielectric constant 61 input capacitance 61 frictional resistance 61 nanotube arrays 61 high-k/metal gate 61 micrometer scale 61 photocurrent 61 planarity 61 parametric yield 61 oxide layer 61 wph 61 antireflective coatings 61 low k dielectric 61 SOI substrate 61 CMOS circuits 61 planar CMOS 61 GaAs gallium arsenide 61 sensing resistors 61 ZnSe 61 #nm lithography [001] 61 Wafer shipments 60 nano imprint 60 dielectric layers 60 eutectic solder 60 monocrystalline silicon 60 silicon Si 60 warpage 60 wafer dicing 60 sapphire substrate 60 mechanical polishing CMP 60 Alien Crosstalk 60 PCB layout 60 nm CMOS process 60 phototransistors 60 compressive stress 60 wirebonding 60 mono crystalline silicon 60 #.#um [001] 60 dielectric layer 60 fluid viscosity 60 k dielectric 60 #.#μ 60 absorption coefficient 60 silicon interposer 60 W/cm2 60 CMP consumables 60 Micromorph 60 wafer metrology 60 thermally activated 60 defectivity 60 #mm ² [002] 60 2Xnm 60 thermal dissipation 60 wafer diameters 60 Gallium arsenide 60 flux residues 60 solder bump 60 silicon 60 5μm 60 martensite 60 photon flux 60 nanometric 60 IC substrates 60 thermo mechanical 60 Vsby 1 60 multicrystalline cells 60 oxide thickness EOT 59 multichip 59 nonpolar GaN 59 gate dielectric 59 epiwafers 59 thermally induced 59 nm CMOS 59 deep sub micron 59 CIS CIGS 59 CdTe PV 59 #nm #nm [005] 59 SiO 2 59 heterojunction 59 #nm CMOS [002] 59 NiSi 59 SiC substrates 59 GaAs pHEMT 59 lasing threshold 59 CMOS wafers 59 nm SRAM 59 hafnium oxide 59 #nm nodes 59 .# micron 59 dielectric breakdown 59 Tetra Reticle Clean 59 tensile stress 59 areal densities 59 transmissivity 59 nanomesh 59 1MHz switching frequency 59 finer geometries 59 gate electrode 59 #um [002] 59 8bit MCU 59 monolithically integrated 59 epi wafers 59 ZnO nanowires 59 HEMT 59 Bragg grating 59 nitride semiconductor 59 capacitances 59 GAIN HBT 59 #μm [001] 59 varistor 59 Schottky rectifiers 59 voltage MOSFET 59 eutectic 59 GaN layers 59 EO polymer 59 photodetector 59 #nm RF CMOS 59 sapphire wafers 59 #nm wavelength [001] 59 bandgaps 59 oscillation frequency 59 CMOS ICs 59 UVTP 59 gate dielectrics 59 copper nanorods 59 AlGaAs 59 tensile strain 59 nm lithography 59 DongbuAnam 59 GaAs substrates 59 metallisation 59 coating thickness 59 #nm #nm [002] 59 solder bumping 59 k gate dielectrics 58 microelectronic device 58 insulator substrate 58 Calibre LFD 58 solder bumps 58 MOS transistor 58 BJTs 58 submicron 58 CMOS IC 58 millisecond anneal 58 AlN 58 nanometer 58 micron diameter 58 Aixtron MOCVD 58 WLCSP 58 sub micron 58 melt viscosity 58 organic TFTs 58 subwavelength 58 silicon nanowire 58 solvent evaporation 58 poly Si 58 substrate 58 Insulator SOI 58 millimeter mm 58 wafer ASPs 58 thermal conductivities 58 bypass capacitor 58 SAR ADC 58 lattice mismatch 58 breakdown voltages 58 discrete implementations 58 #mm# [001] 58 GaN HEMTs 58 silicon photonic 58 nickel silicide 58 linewidth 58 FinFETs 58 #mm# [003] 58 AlGaN GaN 58 TDFN packages 58 sSOI 58 electron mobility 58 Arria GX FPGAs 58 microampere 58 CIGS solar cell 58 Lumiramic phosphor technology 58 SI GaAs 58 ArF immersion lithography 58 pHEMT 58 FD SOI 58 extrudate 58 dielectric materials 58 corrugation 58 RF transistors 58 leadframes 58 Amorphous silicon 58 NanoBridge 58 APTIV film 58 thermal gradients 58 planar lightwave circuits 58 GaAs MESFET 58 laser scribing 58 bandgap 58 Photolithography 58 amorphous silicon Si 58 PHEMT 58 mm wafers 58 SFP + transceivers 58 temperature coefficients 58 #nm transistors 58 PIN photodiode 58 routability 58 milliohm 58 #nm CMOS [001] 58 crystalline silicon modules 58 HEMTs 58 silicon oxynitride 58 InGaAs 58 sq. mm 58 CIGS Copper Indium 58 MirrorBit technology 58 metallization 58 edge roughness LER 58 #LP [002] 58 #.#mm# [001] 58 CoO 58 SIMOX 58 silicon germanium SiGe 58 MirrorBit Quad 58 photolithographic 58 CIGS cells 58 electroless copper 58 Soitec produces 58 sise 58 triplexer 58 MWNT 58 transparent electrode 58 LTPS TFT 58 impedance matching 58 XFP modules 58 lithographic processes 58 solar PV module 58 #.#x#.#mm 58 laser annealing 58 LPCVD 57 microbolometers 57 #.#uF 57 BEOL 57 nm DRAM 57 sapphire wafer 57 martensitic 57 CdSe 57 CCFL LCD 57 density interconnect HDI 57 echo canceller 57 nm 57 PV module efficiencies 57 nanometers nm 57 iCoupler 57 extendibility 57 silicon etch 57 #nm immersion 57 frequency harmonics 57 emission wavelength 57 jitter measurement 57 singulation 57 epitaxy 57 dielectrics 57 silicon waveguide 57 lasing wavelength 57 CdTe Si 57 TGA# SM 57 2μm 57 accuracy repeatability 57 MESFET 57 silica spheres 57 #.#μm [002] 57 tunable optical 57 hydrophobicity 57 CIGS module 57 6mm x 6mm 57 transconductance 57 JESD# [002] 57 capacitive loading 57 JFET 57 overmolding 57 SiC Schottky diodes 57 uniaxial 57 ITRS roadmap 57 FeRAM 57 CMOS oscillators 57 Laser VCSEL 57 LiNbO3 57 e beam lithography 57 #.#μm [001] 57 Si PV 57 Copper Indium Gallium Selenide 57 HBLEDs 57 FPC connectors 57 laser resonator 57 elastic moduli 57 digital isolator 57 Solarflare #GBASE T 57 PWM frequency 57 baseband LSI 57 copper metallization 57 InGaN 57 Stratix IV FPGA 57 k gate dielectric 57 micron thick 57 Gb NAND 57 phototransistor 57 TetraMAX ATPG 57 repeatable measurements 57 EUV masks 57 noise ratio SNR 57 nanometer nm CMOS 57 #ppm ° C 57 resonance frequency 57 PbS 57 antimonide 57 nm geometries 57 SerDes chipset 57 computational lithography 57 leadframe 57 #nm FPGAs 57 4mm thick 57 poly crystalline 57 anneal 57 AdvancedMC module 57 AlGaN 57 poly silicon 57 TQFP package 57 exacting tolerances 57 planar waveguide 57 diameter wafers 57 UV absorbance 57 photon detection 57 GaP 57 MBd 57 cordierite 57 3mm x 57 PIN diode 57 wirewound 57 nanometer lithography 57 nanometer nm NAND flash 57 electroluminescence EL 57 AlSiC 57 dimensional tolerances 57 oscillator frequency 57 monocrystalline wafers 57 Si substrates 57 III nitride 57 #kHz switching frequency 57 Silicon Germanium 57 dipole moment 57 luminous efficacy 57 amorphous alloy transformer 57 DiCon 57 decremental 57 Si wafers 57 SO8 57 interfacial layer 57 serdes 57 5mm x 6mm 57 mm ² 57 lithographic techniques 57 photosystem II 57 spectral density 57 PCI Express specification 57 #.#uA 57 voltage CMOS 57 thermal impedance 57 TSMC #.#um 57 SUPRALink 57 wetted surface 57 quartz oscillators 57 Semiconductors ITRS 57 #/#nm 57 aluminum gallium nitride 57 μm thick 57 VECTOR Express 57 transimpedance amplifier 57 microchannel plate 57 MEMS resonators 57 ARM#EJ processor 57 multicrystalline solar 57 interconnect capacitance 57 SiO2 57 volumetric efficiency 57 rotary encoder 57 BiCMOS 56 gelation 56 SiGe C 56 #.#μm CMOS 56 MOSFET switches 56 microcavity 56 interdigitated 56 MLCCs 56 CMOS logic 56 #.#V DDR3 [002] 56 PRC# 56 DfM 56 SiGe bipolar 56 #GB RDIMM 56 #G DQPSK 56 QMEMS 56 #mm silicon wafers 56 tighter tolerances 56 #nm wafers 56 lattice parameter 56 calcium fluoride 56 FDSOI 56 Aera2 56 PEDOT PSS 56 results QoR 56 through silicon vias 56 #nm node [001] 56 #mm# [002] 56 deep silicon etch 56 RDS ON 56 #.# micron CMOS 56 flexural strength 56 electrochemical capacitors 56 2G HTS wire 56 manganite 56 wafer 56 5nm 56 capacitance values 56 optical lithography 56 Schottky barrier 56 SiPs 56 AFEs 56 DDR PHY 56 semiconducting nanowires 56 #GBASE CX4 56 weldability 56 #nm/#nm 56 photodiode 56 nanopatterned 56 CMOS silicon 56 Gallium Arsenide GaAs 56 SOT# package [001] 56 TFTs 56 jitter tolerance 56 epitaxial 56 GaN transistors 56 nanopillar 56 planar magnetics 56 #Gbps serial 56 #x#x#.#mm [003] 56 2nm 56 TiN 56 nanolayers 56 MEMS oscillators 56 #.#mm x #.#mm x [002] 56 Cadmium telluride 56 multijunction solar cells 56 UMC #nm 56 TxDAC 56 #,# wspm 56 SFP + modules 56 nanochannel 56 SOI silicon 56 uniformities 56 CNT FED 56 OptoCooler 56 GaN LED 56 megapascals 56 #nm DRAM 56 Optima HDx 56 registered DIMMs 56 Cu interconnects 56 FastSPICE 56 Mosfets 56 dc dc controller 56 epitaxial wafers 56 zeolite membranes 56 multicrystalline module 56 RapidIO Switch 56 PVD CVD 56 #MSPS 56 Solamet ® 56 QoR 56 EMIF# 56 toolholder 56 2Gbit 56 cm ² 56 nanobelts 56 annealing temperature 56 SE#L 56 inertial MEMS 56 multicrystalline 56 polycrystalline 56 c Si 56 #lm [002] 56 singulated 56 InAs 56 hydride vapor phase 56 microlenses 56 geometries 56 electrodeposition 56 XRT#L# 56 flowability 56 electrical conductance 56 tensile modulus 56 Rdson 56 optical waveguides 56 electrically insulating 56 #nm laser [001] 56 reflowed 56 Strained silicon 56 #x# mm [004] 56 thermal conductance 56 bending radii 56 density NOR flash 56 RoCE 56 polishing pads 56 film transistors TFTs 56 nm VCSEL 56 optical transceiver modules 56 piezoelectric properties 56 SOFC stacks 56 eWLB technology 56 submicrometer 56 FPCs 56 luminous flux 56 nucleation layer 56 micrometer thick 56 MLCC capacitors 56 #nm [001] 56 Pressurex ® 56 microlens array 56 flexible monolithically integrated 56 PV# [002] 56 microstrip 56 external inductor 56 encapsulant 56 oxide semiconductor 56 glass substrate 56 spherical aberrations 56 micron pixels 56 #nm immersion lithography 56 jitter attenuation 56 CIGS solar panels 56 HKMG 56 x 5mm 56 Mbit SRAMs 56 4 x 4mm 56 nonlinear optical 56 EUV mask 56 XFP MSA 56 μsec 56 dielectric 56 Raman lasers 56 Epitaxial 56 Follow Vishay 56 carbon nanofiber 56 Vertical Cavity Surface Emitting 56 BCTMP 56 millisecond annealing 56 photonic bandgap 56 ultrahigh purity 56 serial EEPROMs 56 QFNs 56 linearization 56 #nm #nm #nm 56 parasitics 56 LED brightness 56 Mbit MRAM 56 BGA packages 56 interfacial tension 56 Quiescent current 56 backside metallization 56 insulator wafers 56 AIX #G# 56 micron 56 RBOM 56 Stratix III 55 germanium substrates 55 sensing resistor 55 silicon waveguides 55 micrometre scale 55 unsprung masses 55 particulate contamination 55 coplanarity 55 hetero junction 55 nm immersion 55 PMOS transistors 55 #.#u 55 #Gb MLC NAND 55 BiFET 55 #G OTN [001] 55 TDA# [002] 55 5mm x 5mm 55 BCDMOS 55 heterostructures 55 aspheres 55 underfill 55 electromechanical coupling 55 heterostructure 55 mono crystalline solar 55 laminate substrate 55 wavefronts 55 PIN photodiodes 55 Dektak 55 QDs 55 nanocrystal 55 correction OPC 55 SiC wafers 55 scale linearly 55 bursty traffic 55 AlN layer 55 ModularBCD 55 Formex GK 55 nano patterning 55 germanium wafers 55 crystalline silicon c 55 optically transparent 55 ohmic 55 ACPL K# 55 4mA 55 resistive element 55 voltage divider 55 cored wire 55 silicon wafer 55 absorber layers 55 #nm SOI 55 MEMS oscillator 55 leadless package 55 CIGS PV 55 plasma etching 55 electrical resistivity 55 isotropic 55 power dissipation 55 planar transistors 55 varactors 55 antireflective coating 55 RF baseband 55 micron wafers 55 #.#μm CMOS process 55 passivation 55 analog circuitry 55 Silicon Solar Cells 55 5M pixel 55 gallium arsenide indium phosphide 55 gallium phosphide 55 epitaxial wafer 55 3nm 55 epitaxial structures 55 synchronous buck converter 55 SO8 package 55 optical modulators 55 μW 55 #.#mm x [001] 55 microamperes 55 conventional photolithography 55 Crystalline silicon 55 SiC epitaxial wafers 55 MI #XM 55 DrMOS 55 InfiniBand DDR 55 QT# [002] 55 nanotubes nanowires 55 particle sizes 55 electron density 55 AMOLEDs 55 sequential clock gating 55 processability 55 TOSAs 55 wafer probing 55 Magma Talus 55 XFP module 55 MB#K# 55 electromigration 55 x 3mm 55 mm silicon wafers 55 Lithium ions 55 outcoupling 55 UCC# 55 indium arsenide 55 nickel hydroxide 55 LDMOS RF power 55 Grätzel cells 55 high voltage BCDMOS 55 MgO 55 nonlinearities 55 PBGA package 55 deep submicron CMOS 55 k dielectrics 55 HyperSolar concentrator 55 partial reconfiguration 55 rotational torque 55 μm diameter 55 chalcogenide glass 55 nm wavelength 55 characteristic impedance 55 CMOS compatible 55 millimeter silicon wafers 55 Zener diodes 55 4mm x 4mm 55 tin oxide 55 scales linearly 55 2Gb DDR2 55 wafer fab equipment 55 DFB lasers 55 Victrex PEEK 55 pn junction 55 UV wavelengths 55 passband 55 VCXO 55 electron scattering 55 lithographic patterning 55 wafer thinning 55 HKMG technology 55 PIN diodes 55 7mm x 55 integrated passives 55 aluminum nitride 55 capital expenditure CAPEX 55 Schottky diode 55 pellicle 55 micromorph 55 nanofilm 55 reconfigurability 55 Aerosol Jet 55 MIM capacitors 55 nanodots 55 DFMA 55 structured ASICs 55 nanotube 55 QFN packages 55 #nm node [002] 55 W mK 55 wafering 55 silicon PV modules 55 CIGSe 55 coarser grind 55 dimensionally stable 55 output capacitance 55 Buried Wordline technology 55 PEDOT 55 3mm x 3mm x 55 nm FPGAs 55 thickness uniformity 55 QFN# package 55 silane gas 55 GaN HEMT 55 micromachined 55 Stratix III FPGAs 55 Si TFT 55 kinematic viscosity 55 ArF 55 monocrystalline ingots 55 sub picosecond 55 chip resistor 55 InGaP HBT 55 microns millionths 55 thermal EMF 55 #um [001] 55 ionic conductivity 55 Ge substrates 55 SWCNT 55 nanopillars 55 solder reflow 55 conformality 55 LatticeEC 55 Bulk density 55 TSVs 55 impedances 55 ballast resistors 55 ZMDI 55 graphene layers 55 deep submicron 55 Structured eASIC 55 reflow profiles 55 CVD diamond 55 hafnium dioxide 55 ZenTime 55 interchangeable modules 55 surface roughness 55 opto electrical 55 kerf 55 reflow temperatures 55 InN 55 Schottky diodes 55 austenitic stainless steels 55 VICTREX PEEK polymer 55 indium gallium nitride InGaN 55 wafer bonder 55 PoE PD 55 toroids 55 alpha olefin 55 geometric distortion 55 nano imprint lithography 55 #.# mW MHz 55 intrinsic jitter 55 temperature gradients 55 tight tolerances 55 concentricity 55 SOI substrates 55 #nm FPGA 55 external EEPROM 54 #.#um [002] 54 HTS wires 54 V# platform 54 ARPES 54 #x#mm package 54 magnetic permeability 54 AdvancedMC processor 54 spiral inductors 54 Gaussian filter 54 #Gbit [001] 54 #x#mm [002] 54 excitation wavelengths 54 Cortex M0 processor 54 SAW oscillators 54 OptiML WLC technology 54 nsec 54 Gallium nitride 54 coercivity 54 leadtimes 54 CMOS circuitry 54 polycrystalline solar 54 FineSim SPICE 54 conductance 54 meV 54 coextrusion 54 stripline 54 nanoindentation 54 diffractive optical elements 54 capacitance 54 embedded EEPROM 54 SiP 54 #GFC 54 photolithography 54 Pseudo SRAM 54 #nm Buried Wordline 54 interposers 54 output capacitors 54 #mohm 54 rigid substrate 54 velocity dispersion 54 superlattice 54 Flow cytometry 54 clamping voltage 54 Carbon nanotube 54 ferrite core 54 2dB 54 mask ROM 54 CY# [003] 54 Optocoupler 54 #nm HKMG 54 multilayer ceramic capacitors 54 Kinsus 54 etalon 54 crossflow 54 AlGaInP 54 microcavities 54 SoC architectures 54 SiC MOSFET 54 chip variation OCV 54 tunable RF 54 cellular baseband 54 photonic crystal 54 tantalum capacitors 54 Complementary Metal Oxide Semiconductor 54 nm FPGA 54 mm wafer 54 serializer deserializer 54 mK 54 Mercury5e 54 CCD CMOS 54 #nm MLC 54 Adaptive DPSK 54 Si TFT LCD 54 #nm NAND flash 54 terrestrial concentrator 54 Day4 Electrode 54 surface passivation 54 TappingMode 54 Cadmium Telluride CdTe 54 Stratix II FPGAs 54 holemaking 54 DDR3 chips 54 Nios processor 54 MIL HDBK #F 54 AMLCDs 54 STLC# 54 compressive strain 54 flexural modulus 54 4mm x 4mm QFN 54 GaN RF 54 photon energies 54 Chip Scale 54 VGA TFT LCD 54 Fab 3E 54 TSV etch 54 ion traps 54 throughput 54 OneNAND memory 54 indium gallium arsenide InGaAs 54 #.#mm x [003] 54 thermomechanical 54 CMOS MEMS 54 Transmission electron microscopy 54 SFP + module 54 digital isolators 54 extreme ultra violet 54 fiber optic transceivers 54 synchronous MOSFET 54 ASIC SoC 54 computational complexity 54 ASICs FPGAs 54 iRCX format 54 PAS# [002] 54 nanometers nanometer 54 particle morphology 54 #.#mm thick [002] 54 RMS jitter